J. L. Tandon - Concepedia

Author

J. L. Tandon

California Institute of Technology

Also Known As

J. L. TANDON, J. L. Tandon, J. Tandon, J.L. TANDON, J.L. Tandon, Jawahar Tandon

Publications

514

Citations

H-Index

Concepts

All Affiliations

California Institute of Technology Rockwell Automation (United States)Lawrence Berkeley National Laboratory University of California, Berkeley

About

J. L. Tandon is an author at California Institute of Technology specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	21	422
2	Applied Physics	14	20	404
3	Electrical Engineering	10	11	236
4	Materials Engineering	4	4	91
5	Natural Sciences	1	1	12

J. L. Tandon

Publications

422

Citations

H-Index

Page 1

	Year	Citations
Bias-induced stress transitions in sputtered TiN films H. Kattelus, J. L. Tandon, C. Sala, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Materials ScienceMaterials EngineeringIntrinsic Stress PropertiesEngineeringSevere Plastic Deformation	1986	42
Silicon implantation in GaAs J. L. Tandon, M.−A. Nicolet, F. H. Eisen Applied Physics Letters SemiconductorsMaterials ScienceElectrical EngineeringElectronic DevicesRoom-temperature Si Implants	1979	40
Effects of Cr redistribution on electrical characteristics of ion-implanted semi-insulating GaAs P.M. Asbeck, J. L. Tandon, B.M. Welch, IEEE Electron Device Letters EngineeringIon-implanted Semi-insulating GaasSemiconductor DeviceSemiconductorsElectrical Characteristics	1980	28
Laser pulse annealing of ion-implanted GaAs S. U. Campisano, G. Fóti, E. Rimini, Journal of Applied Physics SemiconductorsMaterials ScienceElectrical EngineeringGaas Single-crystals WafersEngineering	1980	27
Steady-state thermally annealed GaAs with room-temperature-implanted Si Akio Masuyama, M‐A. Nicolet, I. Golecki, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringIon ImplantationEngineering	1980	26
Large‐Scale Growth of GaAs Epitaxial Layers by Metal Organic Chemical Vapor Deposition J. L. Tandon, Y. Yeh Journal of The Electrochemical Society Gaas Epitaxial LayersEngineeringThin Film Process TechnologyElectronic PropertiesChemical Deposition	1985	23
Saturation of Si activation at high doping levels in GaAs T.C. Banwell, M. Mäenpää, M‐A. Nicolet, Journal of Physics and Chemistry of Solids Electrical EngineeringEngineeringApplied PhysicsSemiconductor MaterialCompound Semiconductor	1983	22
Tantalum‐Based Encapsulants For Thermal Annealing of GaAs J. M. Molarius, E. Kolawa, Kazuhiko Morishita, Journal of The Electrochemical Society Materials EngineeringSemiconductorsMaterials ScienceEngineeringSurface Science	1991	19
Reactively Sputtered W‐N Films as Diffusion Barriers in GaAs Metallizations E. Kolawa, F. C. T. So, J. L. Tandon, Journal of The Electrochemical Society Materials ScienceSemiconductorsHigh Temperature MaterialsEngineeringSputtered W‐n Films	1987	19
The annealing behavior of antimony implanted polycrystalline silicon J. L. Tandon, H.B. Harrison, C. L. Neoh, Applied Physics Letters Materials EngineeringMaterials ScienceSemiconductorsGood Dopant ActivationEngineering	1982	19

Page 1