Effects of Cr redistribution on electrical characteristics of ion-implanted semi-insulating GaAs

Abstract

The redistribution of Cr is shown to be responsible for the formation of deep trails in the electron density profiles of certain semi-insulating GaAs substrates following Se ion implantation and annealing, and for the formation of spurious n-type conducting layers in those substrates following encapsulation with Si <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> N <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> and annealing without implantation.