IEEE Electron Device Letters · 2024 · 16 citations · 16 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMaterials ChemistryMicroelectronicsCapacitive SensingDielectric CeramicsDielectricsElectrode MaterialsFerroelectric CeramicsFerroelectric MaterialsData RetentionDielectric ConstantFerroelectric CapacitorsFerroelectric PropertiesMorphotropic Phase BoundaryNon-volatile MemoryThin Film FerroelectricsZirconia
High Zr concentration of super-lamination (SL) HZO/ZrO2/HZO (HZZ) with morphotropic phase boundary (MPB) to enhance dielectric constant to 46 and 2Pr of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$44~\mu $ </tex-math></inline-formula>C/cm2 is employed in ferroelectric capacitive memory (FCM). The proposed HZZ memcapacitor demonstrates a remarkably high CHCS/CLCS ratio of 245x with 3 V, excellent data retention >104 s, multi-level cell (MLC), and achieves non-destructive read operation (NDRO) for 109 cycles. The MPB-based SL technique for HZZ is a promising concept that elevates the permittivity for FCM/memcapacitor non-volatile memory (NVM) or advanced logic applications.
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Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors
Suraj Cheema, Nirmaan Shanker, Li‐Chen Wang et al. · Nature · 2022 · 348 citations · Full text