Junghyeon Hwang - Concepedia

Author

Junghyeon Hwang

Korea Advanced Institute of Science and Technology ORCID

Also Known As

J.H. Hwang, Jae-Eun Hwang, Junghyeon Hwang

Publications

974

Citations

H-Index

Concepts

All Affiliations

Korea Advanced Institute of Science and Technology Hanyang University Yonsei University Samsung (South Korea)Anyang University

About

Junghyeon Hwang is an author at Korea Advanced Institute of Science and Technology specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	11	610
2	Applied Physics	10	10	591
3	Electrical Engineering	10	10	543
4	Computer Engineering	3	3	59
5	Materials Engineering	3	3	299

Junghyeon Hwang

Publications

871

Citations

H-Index

Page 1

	Year	Citations
The Influence of Top and Bottom Metal Electrodes on Ferroelectricity of Hafnia Yongsun Lee, Youngin Goh, Junghyeon Hwang, IEEE Transactions on Electron Devices Materials ScienceMaterials EngineeringElectrical EngineeringBottom ElectrodeHigh Temperature Materials	2021	181
Ultra-thin Hf0.5Zr0.5O2 thin-film-based ferroelectric tunnel junction via stress induced crystallization Youngin Goh, Junghyeon Hwang, Yongsun Lee, Applied Physics Letters Materials ScienceOxide HeterostructuresElectrical EngineeringBottom ElectrodeEngineering	2020	157
Effect of Forming Gas High-Pressure Annealing on Metal-Ferroelectric-Semiconductor Hafnia Ferroelectric Tunnel Junction Junghyeon Hwang, Youngin Goh, Sanghun Jeon IEEE Electron Device Letters Materials EngineeringMaterials ScienceSemiconductorsEngineeringTunneling Microscopy	2020	67
Selector-less Ferroelectric Tunnel Junctions by Stress Engineering and an Imprinting Effect for High-Density Cross-Point Synapse Arrays Youngin Goh, Junghyeon Hwang, Minki Kim, ACS Applied Materials & Interfaces	2021	67
Excellent Reliability and High-Speed Antiferroelectric HfZrO<sub>2</sub> Tunnel Junction by a High-Pressure Annealing Process and Built-In Bias Engineering Youngin Goh, Junghyeon Hwang, Sanghun Jeon ACS Applied Materials & Interfaces	2020	63
Flexible Ferroelectric Hafnia-Based Synaptic Transistor by Focused-Microwave Annealing Hongrae Joh, Minhyun Jung, Junghyeon Hwang, ACS Applied Materials & Interfaces	2021	60
Effect of Insertion of Dielectric Layer on the Performance of Hafnia Ferroelectric Devices Junghyeon Hwang, Youngin Goh, Sanghun Jeon IEEE Transactions on Electron Devices DielectricsEngineeringFerroelectric Random-access MemoryHafnia Ferroelectric DevicesSemiconductors	2020	51
High Performance and Self-rectifying Hafnia-based Ferroelectric Tunnel Junction for Neuromorphic Computing and TCAM Applications Youngin Goh, Junghyeon Hwang, Minki Kim, 2021 IEEE International Electron Devices Meeting (IEDM) EngineeringEmerging Memory TechnologyImprint Field EffectHigh PerformanceNeurochip	2021	34
Enabling large ferroelectricity and excellent reliability for ultra-thin hafnia-based ferroelectrics with a W bottom electrode by inserting a metal-nitride diffusion barrier Minki Kim, Youngin Goh, Junghyeon Hwang, Applied Physics Letters EngineeringElectrode-electrolyte InterfaceMetal-nitride LayersW DiffusionW Bottom Electrode	2021	24
High‐Performance and High‐Endurance HfO<sub>2</sub>‐Based Ferroelectric Field‐Effect Transistor Memory with a Spherical Recess Channel Taeho Kim, Junghyeon Hwang, Giuk Kim, physica status solidi (RRL) - Rapid Research Letters Materials ScienceNon-volatile MemoryElectrical EngineeringEngineeringFerroelectric Application	2021	21

Page 1