Concepedia

Fabrication of 8-inch N-type 4H-SiC Single Crystal Substrate with Low Dislocation Density

Xixi Xiong, Xianglong YANG, Xiufang Chen, X.X. Li, Xuejian Xie, Guojie HU, Yan Peng, Guojian Yu, Xiaobo Hu, Y. B. Wang,

Journal of Inorganic Materials · 2023 · 11 citations · 3 references

DOIFull text

Open access

Concepts

Abstract

低位错密度 8 英寸导电型碳化硅单晶衬底制备

References

3

Advances in SiC materials and devices: an industrial point of view

R.R. Siergiej, R.C. Clarke, S. Sriram et al. · Materials Science and Engineering B · 1999 · 84 citations

, , +14

Strategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy Savings

Lin Cheng, John W. Palmour, Anant Agarwal et al. · Materials science forum · 2014 · 38 citations · Full text

, , +16

Modified Hot-Zone Design for Large Diameter 4H-SiC Single Crystal Growth

Jung Gyu Kim, Byung Kyu Jang, Sang Ki Ko et al. · Materials science forum · 2019 · 13 citations · Full text

, , +17