Materials science forum · 2019 · 13 citations · 2 references
Natural SciencesMaterials EngineeringMaterials ScienceCeramic MaterialsSemiconductor MaterialsThermal AnalysisCrystal GrowthEpitaxial GrowthHigh-temperature MaterialsSemiconductor Crystal GrowthThermal Properties Of SemiconductorsX-ray DiffractionBulk Crystal GrowthCrystal Quality ControlFull Width At Half MaximumQuality DegradationSilicon CarbideSilicon Carbide (Sic) MaterialsSilicon Carbide Crystal GrowthTemperature Gradient Effects
6-inch 4H-SiC single crystal was grown with modified hot-zone design for large diameter crystal. The simulation data confirmed reduced temperature gradient between center and edge region of growing front, and actual growth experiment exhibited that SiC crystal with good quality was obtained with modified hot-zone design without any quality degradation in edge region of bulk crystal. Based on the mapping measurement of FWHM (Full width at half maximum) value in X-ray rocking curve, the crystal quality of SiC crystals from middle and top region of grown ingot was observed to be almost identical. Furthermore, various properties of SiC crystal grown with modified hot-zone design have been systematically investigated.
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