Robert T. Bondokov - Concepedia

Author

Robert T. Bondokov

Also Known As

Bondokov, Robert T.; Morgan, Kenneth E.; Schowalter, Leo J.; Slack, Glen A., Bondokov, Robert T.; Rao, Shailaja P.; Gibb, Shawn Robert; Schowalter, Leo J., Bondokov, Robert T; Rao, Shailaja P; Gibb, Shawn Robert; Schowalter, Leo J, R. T. Bondokov, R. Ts. Bondokov, Robert Bondokov, Robert T Bondokov, Robert T. Bondokov, Robert Ts. Bondokov

Publications

481

Citations

H-Index

Concepts

All Affiliations

Crystal Research (United States)University of South Carolina

About

Robert T. Bondokov is an author at Crystal Research (United States) specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	327
2	Applied Physics	9	9	327
3	Natural Sciences	1	1	16
4	Chemistry	1	1	16
5	Electrical Engineering	1	1	18

Robert T. Bondokov

Publications

429

Citations

H-Index

Page 1

	Year	Citations
Large-area AlN substrates for electronic applications: An industrial perspective Robert T. Bondokov, Stephan G. Mueller, Kenneth E. Morgan, Journal of Crystal Growth Materials ScienceAluminium NitrideWafer Scale ProcessingEngineeringSurface Science	2008	134
Micro/nanoscale mechanical and tribological characterization of SiC for orthopedic applications Xiaodong Li, Xinnan Wang, Robert T. Bondokov, Journal of Biomedical Materials Research Part B Applied Biomaterials	2004	102
The progress of AlN bulk growth and epitaxy for electronic applications Stephan G. Mueller, Robert T. Bondokov, Kenneth E. Morgan, physica status solidi (a) Materials ScienceMaterials EngineeringAluminium NitrideEngineeringCrystalline Defects	2009	61
Structural and surface characterization of large diameter, crystalline AlN substrates for device fabrication Sandra Schujman, L. J. Schowalter, Robert T. Bondokov, Journal of Crystal Growth Materials ScienceSurface CharacterizationAluminium NitrideLarge DiameterEngineering	2007	36
Two-Inch Aluminum Nitride (AIN) Single Crystal Growth for Commercial Applications Robert T. Bondokov, Sean P. Branagan, Naoki Ishigami, ECS Transactions Aluminium NitrideShort Wavelength OpticOptical MaterialsEngineeringCrystal Growth Technology	2021	27
The Effect of Doping Concentration and Conductivity Type on Preferential Etching of 4H-SiC by Molten KOH Ying Gao, Zehong Zhang, Robert T. Bondokov, MRS Proceedings Materials EngineeringMaterials ScienceElectrical EngineeringMolten KohEngineering	2004	18
Electron paramagnetic resonance of Er3+ ions in aluminum nitride Shan Yang, S. M. Evans, L. E. Halliburton, Journal of Applied Physics Aluminium NitrideCrystal StructureEngineeringMagnetic ResonanceChemistry	2009	16
A Method for Defect Delineation in Silicon Carbide Using Potassium Hydroxide Vapor Robert T. Bondokov, I.I. Khlebnikov, Tsanko Lashkov, Japanese Journal of Applied Physics EngineeringDefect EvaluationPotassium HydroxideSilicon On InsulatorDefect Tolerance	2002	14
A Study of 6H-Seeded 4H-SiC Bulk Growth by PVT Eugene Y. Tupitsyn, Arul Chakkaravarthi Arjunan, Robert T. Bondokov, Materials science forum Materials EngineeringMaterials ScienceEngineeringCrystalline DefectsCrystal Growth Technology	2005	11
Defect Content Evaluation in Single-Crystal AlN Wafers Robert T. Bondokov, Kenneth E. Morgan, Raj Shetty, MRS Proceedings Materials ScienceMaterials EngineeringAluminium NitrideEngineeringApplied Physics	2005	10

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