Epitaxial growth of germanium on silicon using a Gd2O3/Si (111) crystalline template

Calculation of critical layer thickness versus lattice mismatch for Ge<i>x</i>Si1−<i>x</i>/Si strained-layer heterostructures

R. People, J. C. Bean · Applied Physics Letters · 1985 · 1.7K citations

Natural Sciences, Materials Engineering, Materials Science +17

Monolithic integration of InP based heterostructures on silicon using crystalline Gd2O3 buffers

Guillaume Saint‐Girons, Philippe Régreny, Ludovic Largeau et al. · Applied Physics Letters · 2007 · 57 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Accommodation at the interface of highly dissimilar semiconductor/oxide epitaxial systems

Guillaume Saint‐Girons, Jing Cheng, Philippe Régreny et al. · Physical Review B · 2009 · 43 citations

Natural Sciences, Materials Engineering, Materials Science +17

Cooperative solid-vapor-phase epitaxy: An approach for fabrication of single-crystalline insulator/Si/insulator nanostructures

A. Fissel, Dirk Kühne, E. Bugiel et al. · Applied Physics Letters · 2006 · 39 citations

Engineering, Materials Engineering, Materials Science +17

Spontaneous compliance of the InP∕SrTiO3 heterointerface

G. Saint‐Girons, C. Priester, P. Régreny et al. · Applied Physics Letters · 2008 · 38 citations

Engineering, Materials Engineering, Materials Science +14