Accommodation at the interface of highly dissimilar semiconductor/oxide epitaxial systems

Abstract

An equilibrium model describing accommodation at epitaxial interfaces of highly dissimilar material systems is presented. For large lattice mismatches and large interface energies, the material nucleates with its bulk lattice parameter, mismatch being accommodated by interface dislocations. No threading defects are formed, contrasting with standard plastic relaxation mechanisms. It is shown that good quality InP can be grown on ${\text{SrTiO}}_{3}$ (STO) despite the large mismatch. This opens perspectives for the monolithic integration of InP on STO/Si templates and for the widening of the application spectrum of heteroepitaxy.