2019 · 14 citations · 9 references
EngineeringElectrical EngineeringElectronic MaterialsRadiation PhysicsSemiconductor DevicesRadiation Damage In MaterialsRadiation HardeningRadiation ResistanceSemiconductor Device MaterialsSemiconductor ReliabilityWide-bandgap Semiconductor DevicesGallium Nitride Power DevicesHardnessRadiation EffectsRadiation Effects On ReliabilityRadiation HardnessRadiation-hard DevicesRadiation-hard ElectronicsRadiation-tolerant Semiconductor Devices
The COTS power transistors based in GaN were exposed to TID effects by 10-keV X-rays. These HEMTs were tested in the On- and Off-state bias-condition. Switching tests were performed before, during and after irradiation. The devices were characterized at temperatures ranging from −50°C to +75°C. The results indicate that the GaN-technology is a great candidate to be used in harsh environments.
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