Hydrostatic pressure control of the carrier density in GaAs/GaAlAs heterostructures; Role of the metastable deep levels

Self-Consistent Results for<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type Si Inversion Layers

Frank Stern · Physical review. B, Solid state · 1972 · 1.2K citations

Engineering, Materials Engineering, Materials Science +17

Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET

D. Delagebeaudeuf, Nuyen T. Linh · IEEE Transactions on Electron Devices · 1982 · 592 citations

Engineering, Electrical Engineering, Physics +17

Long-lifetime photoconductivity effect in <i>n</i>-type GaAlAs

R. J. Nelson · Applied Physics Letters · 1977 · 303 citations

Natural Sciences, Materials Science, Physics +17

Electron density of the two-dimensional electron gas in modulation doped layers

Kwyro Lee, M. S. Shur, Timothy J. Drummond et al. · Journal of Applied Physics · 1983 · 134 citations · Full text

Engineering, Electrical Engineering, Physics +17

The conduction band structure and deep levels in Ga_1-xAl_xAs alloys from a high-pressure experiment

Amit Saxena · Journal of Physics C Solid State Physics · 1980 · 113 citations

Natural Sciences, Materials Science, Physics +15