IEEE Journal of Solid-State Circuits · 2005 · 70 citations · 8 references
EngineeringComputer EngineeringElectrical EngineeringMemoryMicroelectronicsSemiconductor DevicesMemory DevicesMemory Subsystem DesignMemory Array ArchitectureMemory Circuit DesignMemory MaterialsNon-volatile Cmos MemoryNon-volatile Memory DesignRandom Access Memory (Ram)Random-access Memory
A nonvolatile 64-Mb 1T1R phase-transition random access memory (PRAM) has been developed by fully integrating chalcogenied storage material (GST: Ge/sub 2/Sb/sub 2/Te/sub 5/) into 0.18-/spl mu/m CMOS technology. To optimize SET/RESET distribution, 512-kb sub-array core architecture was proposed, featuring meshed ground line and separated SET/RESET control schemes. Random read access time, random SET and RESET write access times were measured to be 60 ns, 120 ns, and 50 ns, respectively, at 3.0-V supply voltage with 30/spl deg/ C.
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Electronic Switching in Phase-Change Memories
A. Pirovano, Andrea L. Lacaita, A. Benvenuti et al. · IEEE Transactions on Electron Devices · 2004 · 612 citations
Current status of the phase change memory and its future
Sz‐Nian Lai · 2004 · 349 citations
Engineering, Computer Engineering, Electrical Engineering +14
Scaling analysis of phase-change memory technology
A. Pirovano, Andrea L. Lacaita, A. Benvenuti et al. · 2004 · 255 citations
Engineering, Computer Engineering, Electrical Engineering +16
A novel cell technology using N-doped GeSbTe films for phase change RAM
Hideki Horii, J.H. Yi, J.H. Park et al. · 2004 · 122 citations