2004 · 255 citations · 3 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesThermal AnalysisDevice ModelingDevice ScalingMemory DevicesMemory ModelingPower ManagementThermal ManagementDevice Scaling EffectsMemory MaterialsMemory ScalingPhase-change BehaviorPhase-change MemoryPhase-change Thermal EffectsScaling Effects
The scaling capability of chalcogenide-based phase-change memory (PCM) is discussed. Experimental and numerical results are presented, showing that the reset current scales down with the device contact area, reaching values as low as 50 /spl mu/A. The impact of thermal cross-talk between adjacent bits is investigated, showing that thermal disturbs will not limit the scaling of PCM down to the 65 nm technology node. Finally, scaling rules for the PCM technology are provided.
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Electronic switching effect in phase-change memory cells
A. Pirovano, Andrea L. Lacaita, D. Merlani et al. · 2003 · 24 citations