S. J. Hudgens - Concepedia

Author

S. J. Hudgens

Massachusetts Institute of Technology

Also Known As

S Hudgens, S. Hudgens, S. J. Hudgens, S.J Hudgens, S.J. Hudgens, Stephen Hudgens, Stephen J Hudgens, Stephen J. Hudgens

Publications

1.4K

Citations

H-Index

Concepts

All Affiliations

Massachusetts Institute of Technology University of Chicago Devon Energy (United States)

About

S. J. Hudgens is an author at Massachusetts Institute of Technology specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	24	1.3K
2	Applied Physics	17	23	1.3K
3	Natural Sciences	5	5	231
4	Computer Engineering	3	3	357
5	Chemistry	2	2	78

S. J. Hudgens

Publications

1.3K

Citations

H-Index

Page 1

	Year	Citations
Scaling analysis of phase-change memory technology A. Pirovano, Andrea L. Lacaita, A. Benvenuti, Electrical EngineeringScaling CapabilityEngineeringNanoelectronicsApplied Physics	2004	255
Overview of Phase-Change Chalcogenide Nonvolatile Memory Technology S. J. Hudgens, Bob Johnson MRS Bulletin Non-volatile MemoryEngineeringElectronic MemoryApplied PhysicsPhase Change Memory	2004	251
Diamagnetic Susceptibility of Tetrahedral Semiconductors S. J. Hudgens, M. A. Kastner, H. Fritzsche Physical Review Letters SemiconductorsMagnetismDiamagnetic SusceptibilityEngineeringPhysics	1974	111
Study of gap states in hydrogenated amorphous silicon by transient and steady-state photoconductivity measurements Ce Huang, S. Guha, S. J. Hudgens Physical review. B, Condensed matter Steady-state Photoconductivity MeasurementsEngineeringTransient PhotoconductivitySilicon On InsulatorPhotovoltaics	1983	80
Nonvolatile, high density, high performance phase-change memory Scott Tyson, Guy Wicker, T. Lowrey, Hardware SecurityMaterials EngineeringElectrical EngineeringHigh DensityEngineering	2002	64
Total dose radiation response and high temperature imprint characteristics of chalcogenide based RAM resistor elements S. E. Bernacki, K. Hunt, Scott Tyson, IEEE Transactions on Nuclear Science Ram Resistor ElementsNon-volatile MemoryElectrical EngineeringEngineeringPhysics	2000	64
On the mechanism of light-induced effects in hydrogenated amorphous silicon alloys S. Guha, Jeffrey Yang, W. Czubatyj, Applied Physics Letters EngineeringSilicon On InsulatorProlonged Light ExposurePhotovoltaicsSemiconductor Device	1983	56
Evidence for the neutrality of luminescence centres in chalcogenide glasses M. A. Kastner, S. J. Hudgens Philosophical Magazine B Optical MaterialsEngineeringLuminescent GlassGlass MaterialChemistry	1978	54
Invited paper: Thin-film Ovonic threshold switch: Its operation and application in modern integrated circuits W. Czubatyj, S. J. Hudgens Electronic Materials Letters Electrical EngineeringEngineeringApplied PhysicsOptical SwitchingIntegrated Circuits	2012	52
The Role of Interfaces in Damascene Phase-Change Memory D.L. Kencke, I. V. Karpov, Brian G. Johnson, EngineeringBulk PropertiesComputer ArchitectureDamascene Phase-change MemoryPhase Change Memory	2007	38

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