Diamagnetic Susceptibility of Tetrahedral Semiconductors

Abstract

The lattice contribution to the diamagnetic susceptibility, ${\ensuremath{\chi}}_{L}$, is written as a sum of three terms, a core term ${\ensuremath{\chi}}_{c}$, a Langevin-like valence-electron contribution ${\ensuremath{\chi}}_{v}$, and a Van Vleck paramagnetic term ${\ensuremath{\chi}}_{p}$ using a one-oxcillator model. Measurements of ${\ensuremath{\chi}}_{L}$ and $\frac{d{\ensuremath{\chi}}_{L}}{\mathrm{dT}}$ for diamond, Si, Ge, GaAs, and GaP are presented. The model allows a separate determination of each of the three terms and relates these terms to the symmetry and extent of the valence-bond charge distribution.