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Heteroepitaxial growth and interface band alignment in a large-mismatch CsPbI<sub>3</sub>/GaN heterojunction
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Citations
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References
2022
Year
SemiconductorsOxide HeterostructuresMaterials ScienceInterface Band AlignmentEngineeringWide-bandgap SemiconductorPhysicsNanotechnologyApplied PhysicsCondensed Matter PhysicsAluminum Gallium NitrideHeteroepitaxial GrowthGallium OxideGan Power DeviceSingle-crystal Cspbi 3Cspbi 3Categoryiii-v Semiconductor
Heteroepitaxial growth of single-crystal CsPbI 3 nanoplatelets on GaN substrate leads to the formation of a type-II CsPbI 3 /GaN heterojunction that significantly enhances the separation and extraction of free carriers inside CsPbI 3 .
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