Effect of epitaxial growth rate on morphological, structural and optical properties of β-Ga2O3 films prepared by MOCVD

Empirical atomic sensitivity factors for quantitative analysis by electron spectroscopy for chemical analysis

C. D. Wagner, Lawrence E. Davis, M. Zeller et al. · Surface and Interface Analysis · 1981 · 2K citations

Engineering, Sensitivity Factors, Chemical Analysis +18

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

Masataka Higashiwaki, Kohei Sasaki, Akito Kuramata et al. · Applied Physics Letters · 2012 · 1.7K citations

Materials Science, Semiconductor Technology, Electrical Engineering +12

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

J. Y. Tsao, Srabanti Chowdhury, M.A. Hollis et al. · Advanced Electronic Materials · 2017 · 1.4K citations · Full text

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

Growth and applications of Group III-nitrides

O. Ambacher · Journal of Physics D Applied Physics · 1998 · 1.4K citations

Group Iii-nitrides, Wide-bandgap Semiconductor, Aluminium Nitride +16

X-ray photoelectron spectroscopy and auger electron spectroscopy studies of Al-doped ZnO films

M Chen, Xin Wang, Yang Yu et al. · Applied Surface Science · 2000 · 1.3K citations

Materials Science, Aluminium Nitride, Ii-vi Semiconductor +7