Effect of negative bias voltage on the microstructures of AlN thin films fabricated by reactive r.f. magnetron sputtering

Microstructure modification of TiN by ion bombardment during reactive sputter deposition

I. Petrov, Lars Hultman, Ulf Helmersson et al. · Thin Solid Films · 1989 · 327 citations

Natural Sciences, Materials Engineering, Materials Science +16

Polycrystalline TiN films deposited by reactive bias magnetron sputtering: Effects of ion bombardment on resputtering rates, film composition, and microstructure

I. Petrov, Lars Hultman, J.‐E. Sundgren et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1992 · 238 citations

Natural Sciences, Materials Engineering, Materials Science +15

Prospects for device implementation of wide band gap semiconductors

James H. Edgar · Journal of materials research/Pratt's guide to venture capital sources · 1992 · 229 citations

Engineering, Materials Engineering, Materials Science +14

Reactive molecular beam epitaxy of aluminium nitride

S. Yoshida, S. Misawa, Youhei Fujii et al. · Journal of Vacuum Science and Technology · 1979 · 197 citations

Natural Sciences, Materials Science, Physics +17

Low-temperature growth of piezoelectric AlN film by rf reactive planar magnetron sputtering

Tadashi Shiosaki, Tomoko Yamamoto, Tomoyuki Oda et al. · Applied Physics Letters · 1980 · 165 citations

Natural Sciences, Materials Engineering, Materials Science +15