Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

J. Y. Tsao, Srabanti Chowdhury, M.A. Hollis et al. · Advanced Electronic Materials · 2017 · 1.4K citations · Full text

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

Oxygen vacancies and donor impurities in β-Ga2O3

Joel B. Varley, J. R. Weber, Anderson Janotti et al. · Applied Physics Letters · 2010 · 985 citations

Oxygen Vacancies, Engineering, Chemistry +16

Role of self-trapping in luminescence and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-type conductivity of wide-band-gap oxides

Joel B. Varley, Anderson Janotti, Cesare Franchini et al. · Physical Review B · 2012 · 579 citations

Optical Materials, Engineering, Optoelectronic Devices +23

Recent progress on the electronic structure, defect, and doping properties of Ga2O3

Jiaye Zhang, Jueli Shi, Dongchen Qi et al. · APL Materials · 2020 · 545 citations · Full text

Materials Engineering, Materials Science, Electrical Engineering +15

Electrical properties of <i>β</i>-Ga2O3 single crystals grown by the Czochralski method

K. Irmscher, Zbigniew Galazka, Mike Pietsch et al. · Journal of Applied Physics · 2011 · 543 citations

Materials Science, Carbon Dioxide, Engineering +15