A. Parisini - Concepedia

Author

A. Parisini

University of Parma ORCID

Also Known As

A Parisini, A. Parisini, Antonella Parisini, Parisini, A., Parisini, Antonella

150

Publications

1.7K

Citations

H-Index

Concepts

All Affiliations

University of Parma Institute of Materials for Electronics and Magnetism Institute for Microelectronics and Microsystems Istituto Nazionale per la Fisica della Materia National Interuniversity Consortium for the Physical Sciences of Matter

About

A. Parisini is an author at University of Parma specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	19	35	1.1K
2	Applied Physics	19	32	1.1K
3	Natural Sciences	4	4	93
4	Biomedical Engineering	1	1	15
5	Chemical Engineering	1	1	30

A. Parisini

Publications

1.3K

Citations

H-Index

Page 1

	Year	Citations
Thermal stability of ε-Ga2O3 polymorph R. Fornari, M. Pavesi, V. Montedoro, Acta Materialia Materials ScienceEngineeringApplied PhysicsGallium OxideFunctional Materials	2017	129
ε-Ga2O3 epilayers as a material for solar-blind UV photodetectors M. Pavesi, Filippo Fabbri, Francesco Boschi, Materials Chemistry and Physics Materials ScienceEngineeringApplied Physicsε-Ga2o3 EpilayersOptoelectronics	2017	128
Analysis of the scattering mechanisms controlling electron mobility in<i>β</i>-Ga<sub>2</sub>O<sub>3</sub>crystals A. Parisini, R. Fornari Semiconductor Science and Technology SemiconductorsElectron DensityMaterials ScienceHall Factor CorrectionEngineering	2016	90
The electronic structure of <i>ε</i>-Ga2O3 M. Mulazzi, Felix Reichmann, Andreas Becker, APL Materials	2019	73
Optical absorption near the fundamental absorption edge in GaSb Carlo Ghezzi, R. Magnanini, A. Parisini, Physical review. B, Condensed matter Fundamental AbsorptionEngineeringPhotoluminescencePhysicsOptical Properties	1995	57
Si and Sn doping of ε-Ga2O3 layers A. Parisini, A. Bosio, V. Montedoro, APL Materials Materials EngineeringMaterials ScienceElectrical EngineeringSemiconductorsTransport Behavior	2019	56
Analysis of the hole transport through valence band states in heavy Al doped 4H-SiC by ion implantation A. Parisini, Roberta Nipoti Journal of Applied Physics Materials EngineeringMaterials ScienceIon ImplantationSemiconductor TechnologyEngineering	2013	51
Conventional thermal annealing for a more efficient p-type doping of Al<sup>+</sup> implanted 4H-SiC Roberta Nipoti, Raffaele Scaburri, Anders Hallén, Journal of materials research/Pratt's guide to venture capital sources Materials EngineeringMaterials ScienceElectrical EngineeringSemiconductor TechnologyEngineering	2012	44
Optical functions of InGaP/GaAs epitaxial layers from 0.01 to 5.5 eV R. Ferrini, G. Guizzetti, M. Patrini, The European Physical Journal B PhotonicsElectrical EngineeringOptical MaterialsEngineeringPhysics	2002	36
Experimental evidence of delocalization in correlated disorder superlattices V. Bellani, E. Díez, A. Parisini, Physica E Low-dimensional Systems and Nanostructures EngineeringPhysicsCondensed Matter PhysicsQuantum MaterialsDisordered Quantum System	2000	36

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