Salvatore Vantaggio

Si and Sn doping of ε-Ga2O3 layers

A. Parisini, A. Bosio, V. Montedoro et al. · APL Materials · 2019 · 59 citations · Full text

Engineering, Materials Science, Physics +17

Electronic properties and photo-gain of UV-C photodetectors based on high-resistivity orthorhombic κ-Ga2O3 epilayers

Carmine Borelli, A. Bosio, A. Parisini et al. · Materials Science and Engineering B · 2022 · 31 citations

Natural Sciences, Materials Engineering, Materials Science +14

Deep and shallow electronic states associated to doping, contamination and intrinsic defects in ε-Ga2O3 epilayers

A. Parisini, A. Bosio, H. J. von Bardeleben et al. · Materials Science in Semiconductor Processing · 2021 · 24 citations

Natural Sciences, Materials Science, Physics +16

A Metal-Oxide Contact to ε-Ga₂O₃ Epitaxial Films and Relevant Conduction Mechanism

A. Bosio, Carmine Borelli, A. Parisini et al. · ECS Journal of Solid State Science and Technology · 2020 · 17 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

n-Type doping of ε-Ga2O3 epilayers by high-temperature tin diffusion

A. Bosio, A. Parisini, Alessio Lamperti et al. · Acta Materialia · 2021 · 16 citations

Engineering, Materials Engineering, Materials Science +14