Bipolar pulsed reactive magnetron sputtering of epitaxial AlN- films on Si(111) utilizing a technology suitable for 8″ substrates

Ror2 signaling regulates Golgi structure and transport through IFT20 for tumor invasiveness

Michiru Nishita, Seung‐Yeol Park, Tadashi Nishio et al. · Scientific Reports · 2017 · 16.1K citations · Full text

Life Sciences, Cell Biology, Oncology +17

Control of reactive sputtering processes

W.D. Sproul, D.J. Christie, D.C. Carter · Thin Solid Films · 2005 · 395 citations

Engineering, Manufacturing Engineering, Materials Processing +5

Growth of AlN films on Si (100) and Si (111) substrates by reactive magnetron sputtering

J.X. Zhang, Hao Cheng, Y.Z. Chen et al. · Surface and Coatings Technology · 2004 · 140 citations

Natural Sciences, Materials Engineering, Materials Science +14

Atomic arrangement at the AlN/Si (111) interface

R. Liu, F. A. Ponce, A. Dadgar et al. · Applied Physics Letters · 2003 · 126 citations

Engineering, Materials Engineering, Materials Science +17

High rate reactive sputtering process control

William D. Sproul · Surface and Coatings Technology · 1987 · 96 citations

Engineering, Manufacturing Engineering, Manufacturing Processes +7