Substitutional synthesis of sub-nanometer InGaN/GaN quantum wells with high indium content

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<i>Ab initio</i>molecular dynamics for liquid metals

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Fast Parallel Algorithms for Short-Range Molecular Dynamics

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Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures

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Measurement of the displacement field of dislocations to 0.03 Å by electron microscopy

Martin Hÿtch, Jean‐Luc Putaux, J. M. Pénisson · Nature · 2003 · 577 citations

Engineering, Dislocation Interaction, Crystalline Defects +12