Surface residual stress in amorphous SiO2 insulating layer on Si substrate near a Cu through-silicon via (TSV) investigated by nanoindentation

An improved technique for determining hardness and elastic modulus using load and displacement sensing indentation experiments

W. C. Oliver, George M. Pharr · Journal of materials research/Pratt's guide to venture capital sources · 1992 · 26.6K citations

Natural Sciences, Materials Engineering, Materials Science +16

Recent advances on electromigration in very-large-scale-integration of interconnects

K. N. Tu · Journal of Applied Physics · 2003 · 1.1K citations

Engineering, Electrical Engineering, Materials Science +17

Influences of stress on the measurement of mechanical properties using nanoindentation: Part I. Experimental studies in an aluminum alloy

Ting Y. Tsui, W. C. Oliver, George M. Pharr · Journal of materials research/Pratt's guide to venture capital sources · 1996 · 596 citations

Natural Sciences, Materials Engineering, Materials Science +16

Three-dimensional silicon integration

John Knickerbocker, Paul Andry, B. Dang et al. · IBM Journal of Research and Development · 2008 · 493 citations

Engineering, Electrical Engineering, Manufacturing Engineering +17

High-Frequency Scalable Electrical Model and Analysis of a Through Silicon Via (TSV)

Joohee Kim, Jun So Pak, Jonghyun Cho et al. · IEEE Transactions on Components Packaging and Manufacturing Technology · 2011 · 487 citations

Engineering, Electrical Engineering, Circuit Theory +16