An insulated gate bipolar transistor with three-layer poly gate for improved figure of merit

The insulated gate transistor: A new three-terminal MOS-controlled bipolar power device

B. Jayant Baliga, M.S. Adler, R.P. Love et al. · IEEE Transactions on Electron Devices · 1984 · 238 citations

Engineering, Electrical Engineering, Microelectronics +13

Extended-$\hbox{p}^{+}$ Stepped Gate LDMOS for Improved Performance

M. Jagadesh Kumar, Radhakrishnan Sithanandam · IEEE Transactions on Electron Devices · 2010 · 80 citations · Full text

Engineering, Electrical Engineering, Microelectronics +15

Silicon Complementary Metal–Oxide–Semiconductor Field-Effect Transistors with Dual Work Function Gate

Kee-Yeol Na, Yeong-Seuk Kim · Japanese Journal of Applied Physics · 2006 · 78 citations

Engineering, Electrical Engineering, Microelectronics +16

The super junction bipolar transistor: a new silicon power device concept for ultra low loss switching applications at medium to high voltages

Friedhelm Bauer · Solid-State Electronics · 2003 · 75 citations

Engineering, Electrical Engineering, Microelectronics +12

Vertical Bipolar Charge Plasma Transistor with Buried Metal Layer

Kanika Nadda, M. Jagadesh Kumar · Scientific Reports · 2015 · 49 citations · Full text

Engineering, Electrical Engineering, Physics +16