Surface and Interface Analysis · 2020 · 11 citations · 15 references
EngineeringMaterials EngineeringMaterials ScienceInterface ScienceSemiconductor MaterialsThin FilmsPhotoelectron SpectroscopySemiconductor HeterostructuresSemiconductor InterfacesSemiconductor PhysicsSemiconductor Thin FilmsX-ray Photoelectron SpectroscopyBand OffsetsFilm ThicknessLine Broadening MechanismsMetalorganic Vapor Phase EpitaxySpectral Line BroadeningSurface Core-level ShiftsValence BandValence Band Structure
We present a study of buried GaP/Si(001) heterointerfaces by hard X‐ray photoelectron spectroscopy. Well‐defined thin (4–50 nm) GaP films were grown on Si(001) substrates with 2° miscut orientations by metalorganic vapor phase epitaxy. Core level photoelectron intensities and valence band spectra were measured on heterostructures as well as on the corresponding reference (bulk) substrates. Detailed analysis of core level peaks revealed line broadening and energetic shifts. Valence band offsets were derived for the films with different thickness. Based on the observed variation of the valence band offsets with the GaP film thickness and on the experimental evidence of line broadening, the existence of charge displacement at the GaP/Si(001) interface is suggested.
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E. A. Kraut, R. W. Grant, J. R. Waldrop et al. · Physical Review Letters · 1980 · 1.5K citations
Natural Sciences, Materials Engineering, Materials Science +17
Polar heterojunction interfaces
Walter A. Harrison, E. A. Kraut, J. R. Waldrop et al. · Physical review. B, Condensed matter · 1978 · 628 citations
Natural Sciences, Materials Engineering, Materials Science +17
Measurement of semiconductor heterojunction band discontinuities by x-ray photoemission spectroscopy
J. R. Waldrop, R. W. Grant, S. P. Kowalczyk et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1985 · 140 citations
Natural Sciences, Electrical Engineering, Materials Science +17