Germanium-Gallium Arsenide Heterojunctions [Letter to the Editor]

Abstract

Abrupt monocrystalline junctions between two different semiconductor materials (heterojunctions) <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</sup> have been made by depositing germanium epitaxially on gallium arsenide substrates. The purpose of this communication is to summarize some tentative results obtained in a study of the electrical characteristics of these junctions. A more detailed paper is under preparation.