Performance enhancement of <i>β</i> -Ga ₂ O ₃ on Si (100) based Schottky barrier diodes using REduced SURface Field

Abstract

Abstract Schottky barrier diodes (SBDs) have been fabricated laterally on a β -Ga 2 O 3 film grown on both p-type and n-type Si (100) substrates using a pulsed laser deposition technique. The sample of Ga 2 O 3 on p-Si was further annealed at 600 °C to optimize device performance. Platinum (Pt) and Titanium (Ti)/Gold (Au) metal stacks have been utilized for the formation of Schottky and Ohmic contact on the Ga 2 O 3 , respectively. Considerably high breakdown voltages (V BR ) of 190, and 172 V and a significantly low on-resistance ( R on ) of 330, and 15 mΩ.cm 2 , have been obtained for the as-deposited sample and sample annealed at 600 °C, respectively for lateral Ga 2 O 3 /p-Si SBDs. Moreover, a much lower V BR of 56 V and higher on-resistance of 970 mΩ.cm 2 have been measured for Ga 2 O 3 /n-Si SBDs as compared to the Ga 2 O 3 /p-Si. The presence of REduced SURface Field effect in n-Ga 2 O 3 /p-Si based diodes is attributed to this enhancement of its V BR as compared to n-Ga 2 O 3 /n-Si SBDs. Moreover, the highest Baliga figure of merits (V 2 BR / R on ) for the Ga 2 O 3 /p-Si sample annealed at 600 °C has been found to be 1.97 MW.cm −2 . Thus, the present article shall open up a new power device research avenue of Ga 2 O 3 on Si.