Ankush Bag

Impact of annealing temperature on band-alignment of PLD grown Ga2O3/Si (100) heterointerface

Manoj K. Yadav, Arnab Mondal, Subhashis Das et al. · Journal of Alloys and Compounds · 2019 · 114 citations

Engineering, Materials Engineering, Materials Science +12

Extremely low dark current and detection range extension of Ga ₂ O ₃ UV photodetector using Sn alloyed nanostructures

Arnab Mondal, Manoj K. Yadav, S.N. Shringi et al. · Nanotechnology · 2020 · 50 citations

Engineering, Materials Engineering, Materials Science +17

OFF-State Leakage and Current Collapse in AlGaN/GaN HEMTs: A Virtual Gate Induced by Dislocations

Saptarsi Ghosh, Subhashis Das, Syed Mukulika Dinara et al. · IEEE Transactions on Electron Devices · 2018 · 38 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Exceptional Responsivity (>6 kA/W) and Dark Current (<70 fA) Tradeoff of n-Ga₂O₃/p-CuO Quasi-Heterojunction-Based Deep UV Photodetector

Ashish Kumar, Arpit Nandi, Ankush Bag · IEEE Transactions on Electron Devices · 2020 · 38 citations

Engineering, Electrical Engineering, Materials Science +13

High-resolution X-ray diffraction analysis of AlxGa1−xN/InxGa1−xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations

Sanjay Kumar Jana, Partha Mukhopadhyay, Saptarsi Ghosh et al. · Journal of Applied Physics · 2014 · 37 citations

Engineering, Materials Engineering, Materials Science +17