Saptarsi Ghosh - Concepedia

Author

Saptarsi Ghosh

Indian Institute of Technology Kharagpur

Also Known As

S Ghosh, S. Ghosh, S.K.Ghosh, Saptarsi Ghosh

Publications

278

Citations

H-Index

Concepts

All Affiliations

Indian Institute of Technology Kharagpur Indian Institute of Technology Mandi

About

Saptarsi Ghosh is an author at Indian Institute of Technology Kharagpur specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	195
2	Applied Physics	8	8	195
3	Electrical Engineering	7	7	178
4	Materials Science	4	4	110
5	Chemical Engineering	1	1	27

Saptarsi Ghosh

Publications

216

Citations

H-Index

Page 1

	Year	Citations
High-resolution X-ray diffraction analysis of AlxGa1−xN/InxGa1−xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations Sanjay Kumar Jana, Partha Mukhopadhyay, Saptarsi Ghosh, Journal of Applied Physics Materials ScienceSemiconductorsElectrical EngineeringIngan ChannelEngineering	2014	36
OFF-State Leakage and Current Collapse in AlGaN/GaN HEMTs: A Virtual Gate Induced by Dislocations Saptarsi Ghosh, Subhashis Das, Syed Mukulika Dinara, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorElectrical EngineeringDislocation DensityOff-state Reverse-bias LeakageEngineering	2018	36
Enhancement of two dimensional electron gas concentrations due to Si3N4 passivation on Al0.3Ga0.7N/GaN heterostructure: strain and interface capacitance analysis Syed Mukulika Dinara, Sanjay Kr. Jana, Saptarsi Ghosh, AIP Advances Materials ScienceSemiconductorsElectrical EngineeringTensile StrainEngineering	2015	30
Highly Sensitive Acetone Sensor Based on Pd/AlGaN/GaN Resistive Device Grown by Plasma-Assisted Molecular Beam Epitaxy Subhashis Das, Saptarsi Ghosh, Rahul Kumar, IEEE Transactions on Electron Devices Materials ScienceElectrical EngineeringElectronic DevicesChemical EngineeringElectronic Materials	2017	27
Thermodynamic analysis of acetone sensing in Pd/AlGaN/GaN heterostructure Schottky diodes at low temperatures Subhashis Das, Shubhankar Majumdar, Rahul Kumar, Scripta Materialia Wide-bandgap SemiconductorElectrical EngineeringThermodynamic AnalysisLow TemperaturesEngineering	2015	23
Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaN heterostructures on sapphire with ultra thin buffer Mihir Kumar Mahata, Saptarsi Ghosh, Sanjay Kumar Jana, AIP Advances Materials ScienceSemiconductorsComprehensive StrainUltra Thin BufferCluster Tool	2014	17
Comparative DC Characteristic Analysis of AlGaN/GaN HEMTs Grown on Si(111) and Sapphire Substrates by MBE Partha Mukhopadhyay, Ankush Bag, U P Gomes, Journal of Electronic Materials Wide-bandgap SemiconductorElectrical EngineeringEngineeringSapphire SubstratesApplied Physics	2014	15
Effects of threading dislocations on drain current dispersion and slow transients in unpassivated AlGaN/GaN/Si heterostructure field-effect transistors Saptarsi Ghosh, Syed Mukulika Dinara, Partha Mukhopadhyay, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringSlow TransientsPhysics	2014	11
Application Specific Usage Control Implementation Verification Rajkumar P.V., Saptarsi Ghosh, Pallab Dasgupta Zenodo (CERN European Organization for Nuclear Research)	2009	11
Influence of growth morphology on electrical and thermal modeling of AlGaN/GaN HEMT on sapphire and silicon Partha Mukhopadhyay, Utsav Banerjee, Ankush Bag, Solid-State Electronics	2014	10

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