Beveled Fluoride Plasma Treatment for Vertical $\beta$ -Ga₂O₃Schottky Barrier Diode With High Reverse Blocking Voltage and Low Turn-On Voltage

Abstract

In this letter, we report on demonstrating a high performance vertical β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> Schottky barrier diode (SBD) based on a self-aligned beveled fluorine plasma treatment (BFPT) edge termination structure. Owing to the strong electronegativity of fluorine ions, the fixed negative charges introduced by F ions during self-aligned BFPT process alleviate the electric field crowding, reduce the reverse leakage current and improve the breakdown voltage up to 1 050V even with a low differential on resistance of 2.5 mΩ·cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , combining with a high Ion/Ioff of 109, a Schottky barrier height of 1.03 eV and a low ideality factor of 1.07-1.11.Without implantation and post annealing, the self-aligned BFPT can serve as a simple, effective and viable edge termination technique to fabricate high performance β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> rectifiers.