Zhaoqing Feng

Field-Plated Lateral β-Ga2O3 Schottky Barrier Diode with High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm2

Zhuangzhuang Hu, Hong Zhou, Qian Feng et al. · IEEE Electron Device Letters · 2018 · 166 citations

More Than 3, Electrical Engineering, Engineering +7

High-Performance Vertical $\beta$ -Ga₂O₃Schottky Barrier Diode With Implanted Edge Termination

Hong Zhou, Qian Feng, Jing Ning et al. · IEEE Electron Device Letters · 2019 · 143 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +11

Beveled Fluoride Plasma Treatment for Vertical $\beta$ -Ga₂O₃Schottky Barrier Diode With High Reverse Blocking Voltage and Low Turn-On Voltage

Zhuangzhuang Hu, Yuanjie Lv, Chunyong Zhao et al. · IEEE Electron Device Letters · 2020 · 81 citations

Semiconductor Technology, Electrical Engineering, Schottky Barrier Height +15

Normally-Off-$\beta$ -Ga₂O₃ Power MOSFET With Ferroelectric Charge Storage Gate Stack Structure

Zhaoqing Feng, Xusheng Tian, Zhe Li et al. · IEEE Electron Device Letters · 2020 · 67 citations

Device Modeling, Semiconductors, Electrical Engineering +13

Influence of annealing atmosphere on the performance of a β-Ga₂O₃ thin film and photodetector

Zhaoqing Feng, Lu Huang, Qian Feng et al. · Optical Materials Express · 2018 · 66 citations · Full text

Crystal Structure, Optical Materials, Engineering +17