Boosted ultraviolet electroluminescence of InGaN/AlGaN quantum structures grown on high-index contrast patterned sapphire with silica array

The emergence and prospects of deep-ultraviolet light-emitting diode technologies

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Advances in group III-nitride-based deep UV light-emitting diode technology

Michael Kneissl, Tim Kolbe, C.L. Chua et al. · Semiconductor Science and Technology · 2010 · 673 citations

Engineering, Materials Engineering, Materials Science +4

AlGaN photonics: recent advances in materials and ultraviolet devices

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Engineering, Materials Engineering, Materials Science +17

Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency

Takayoshi Takano, Takuya Mino, Jun Sakai et al. · Applied Physics Express · 2017 · 560 citations

Engineering, Electrical Engineering, Materials Science +15

Microstructure of heteroepitaxial GaN revealed by x-ray diffraction

Rosa Chierchia, T. Böttcher, H. Heinke et al. · Journal of Applied Physics · 2003 · 391 citations

Natural Sciences, Materials Engineering, Materials Science +17