Vacancy-modulated self-rectifying characteristics of NiOx/Al2O3-based nanoscale ReRAM devices

Resistance random access memory

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Natural Sciences, Materials Engineering, Materials Science +14

Coexistence of Negative Differential Resistance and Resistive Switching Memory at Room Temperature in TiO<i>_x</i> Modulated by Moisture

Guangdong Zhou, Shukai Duan, Ping Li et al. · Advanced Electronic Materials · 2018 · 171 citations

Natural Sciences, Materials Science, Memory +16

Biodegradable Natural Pectin‐Based Flexible Multilevel Resistive Switching Memory for Transient Electronics

Jiaqi Xu, Xiaoning Zhao, Zhongqiang Wang et al. · Small · 2018 · 151 citations

Natural Sciences, Materials Engineering, Materials Science +16

A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown

Shibing Long, Xiaojuan Lian, C. Cagli et al. · IEEE Electron Device Letters · 2013 · 131 citations

Engineering, Electrical Engineering, Materials Science +17

Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays

Qing Luo, Xiaoxin Xu, Hongtao Liu et al. · Nanoscale · 2016 · 107 citations

Engineering, Electrical Engineering, Materials Science +17