IEEE Electron Device Letters · 2013 · 131 citations · 17 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesCurrent-voltage CharacteristicsDevice ModelingMemory ModelingMemristive MaterialsPercolation TheorySemiconductor ReliabilityOxide BreakdownOxide Memristive MaterialsPercolationPercolation AnalysisPercolation BehaviorPercolation TransitionResistive Random-access MemoryWeibull Model
The set voltage distribution of Pt/HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /Pt resistive switching memory is shown to fit well a Weibull model with Weibull slope and scale factor increasing logarithmically with the resistance measured at the set point. Gaining inspiration from the percolation model of oxide breakdown, a physics-based model for the V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">set</sub> statistics is proposed. The results of the model are completely consistent with the experimental results and demonstrate the need of a strong reset to get large Weibull slope that provides some relief to the strong requirements imposed by the set speed-read disturb dilemma.
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Memristive devices for computing
J. Joshua Yang, Dmitri B. Strukov, Duncan R. Stewart · Nature Nanotechnology · 2012 · 3.8K citations
Engineering, Computer Engineering, Electrical Engineering +11
H.-S. Philip Wong, Heng-Yuan Lee, Shimeng Yu et al. · Proceedings of the IEEE · 2012 · 2.7K citations