Improved electrical performance of a sol–gel IGZO transistor with high-k Al2O3 gate dielectric achieved by post annealing - Concepedia

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Improved electrical performance of a sol–gel IGZO transistor with high-k Al2O3 gate dielectric achieved by post annealing

DOI Full Paper Access

59

Citations

32

References

2019

Year

Esther Lee, Tae Hyeon Kim, Seungwon Lee, Jee Hoon Kim, Jaeun Kim, T.G. Jeong, Ji‐Hoon Ahn, Byungjin Cho

Nano Convergence

References

	Year	Citations

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