Publication | Open Access
Probing momentum distributions in magnetic tunnel junctions via hot-electron decay
629
Citations
21
References
2007
Year
Tunnel Momentum DistributionEngineeringVacuum DeviceAl2o3 BarriersMagnetoresistanceSemiconductor DeviceTunneling MicroscopyNanoelectronicsTunnelingTunneling MicroscopeMaterials ScienceQuantum SciencePhysicsHot-electron DecayQuantum MagnetismSpintronicsNatural SciencesApplied PhysicsCondensed Matter Physics
The tunnel momentum distribution in a (magnetic) tunnel junction is probed by analyzing the decay of the hot electrons in the Co metal anode after tunneling, using a three-terminal transistor structure in which the hot-electron attenuation is sensitive to the tunnel momentum distribution. Solid state amorphous Al2O3 barriers and the vacuum barrier of a scanning tunneling microscope are compared. For the former the attenuation length in nominally the same Co is strikingly larger (factor of 2), implying a more isotropic tunnel momentum distribution for Al2O3 barriers.
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