Analysis of the Fast-Switching LIGBT With Double Gates and Integrated Schottky Barrier Diode

Abstract

A novel fast-switching lateral-insulated gate bipolar transistor (LIGBT) with double gates and integrated Schottky barrier diode (SBD) is proposed and studied in this paper by TCAD simulation. In order to reduce the turn-off time and maintain a low forward voltage drop, the proposed structure introduces an integrated SBD structure at the anode and an additional trench gate at the cathode. First, the integrated SBD provides an extra electron extraction path and the additional trench gate enhances the injection of the N <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -cathode. Furthermore, the insulated oxide pillar between the N-buffer and integrated SBD further reduces the snapback voltage. Finally, the simulation results show that the turn-off time of the conventional LIGBT is 52.4% larger than that of trench/planar gate SBD (TP-SBD) LIGBT under the same forward voltage of 1.49 V. Moreover, the latch current density of TP-SBD LIGBT is increased by nearly 200% compared to that of the conventional LIGBT, while almost the same latch voltage is obtained, so the proposed TP-SBD LIGBT can improve the latch immunity.