Nanoscale Research Letters · 2019 · 61 citations · 37 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsPower ElectronicsSemiconductor DevicesIii-v SemiconductorsIon ImplantationSemiconductor Device MaterialsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsBreakdown VoltageForward Bias CharacteristicsHigh-voltage BreakdownJunction BreakdownSchottky Barrier ContactsSchottky Barrier DiodesSchottky BarriersTemperature Dependence
The edge-terminated Au/Ni/β-Ga 2 O 3 Schottky barrier diodes were fabricated by using argon implantation to form the high-resistivity layers at the periphery of the anode contacts. With the implantation energy of 50 keV and dose of 5 × 10 14 cm −2 and 1 × 10 16 cm −2 , the reverse breakdown voltage increases from 209 to 252 and 451 V (the maximum up to 550 V) and the Baliga figure-of-merit (V BR 2 /R on ) also increases from 25.7 to 30.2 and 61.6 MW cm −2 , about 17.5% and 140% enhancement, respectively. According to the 2D simulation, the electric fields at the junction corner are smoothed out after argon implantation and the position of the maximum breakdown electric filed, 5.05 MV/cm, changes from the anode corner at the interface to the overlap corner just under the implantation region. The temperature dependence of the forward characteristics was also investigated.
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Oxygen vacancies and donor impurities in β-Ga2O3
Joel B. Varley, J. R. Weber, Anderson Janotti et al. · Applied Physics Letters · 2010 · 1K citations