Stabilization of sputtered AlN/sapphire templates during high temperature annealing

Advances in group III-nitride-based deep UV light-emitting diode technology

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Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry

T. Metzger, R. Höpler, E. Born et al. · Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties · 1998 · 553 citations

Natural Sciences, Materials Engineering, Materials Science +17

Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing

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Natural Sciences, Materials Engineering, Materials Science +17

AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire

Norman Susilo, Sylvia Hagedorn, Dominik Jaeger et al. · Applied Physics Letters · 2018 · 201 citations

Engineering, Materials Engineering, Materials Science +17

Annealing of an AlN buffer layer in N₂–CO for growth of a high-quality AlN film on sapphire

Hideto Miyake, Gou Nishio, Shuhei Suzuki et al. · Applied Physics Express · 2016 · 191 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17