How to obtain metal-polar untwinned high-quality (1 0 −1 3) GaN on m-plane sapphire

Oblique evaporation and surface diffusion

Léon Abelmann, Cock Lodder · Thin Solid Films · 1997 · 328 citations

Natural Sciences, Materials Science, Surface Chemistry +10

Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diode

Rajat Sharma, P. Morgan Pattison, Hisashi Masui et al. · Applied Physics Letters · 2005 · 232 citations

Engineering, Electrical Engineering, Materials Science +17

Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates

Troy J. Baker, B. A. Haskell, Feng Wu et al. · Japanese Journal of Applied Physics · 2005 · 166 citations

Engineering, Materials Engineering, Materials Science +14

Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells

Tim Wernicke, Lukas Schade, Carsten Netzel et al. · Semiconductor Science and Technology · 2012 · 143 citations

Engineering, Materials Science, Physics +17

Nobel Lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-type GaN by Mg doping followed by low-energy electron beam irradiation

Hiroshi Amano · Reviews of Modern Physics · 2015 · 137 citations

Engineering, Electrical Engineering, Materials Science +16