RSC Advances · 2018 · 61 citations · 26 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesThin FilmsAtomic Layer DepositionMetal-oxide-semiconductor Field-effect TransistorsOxide SemiconductorsSemiconductor Device MaterialsSemiconductor Thin FilmsThin-film TransistorsBias Stress EffectsBias Stress InstabilityCharge TrappingCharge Trapping EffectsOxide Thin-film TransistorsPositive Bias Temperature InstabilitySemiconductor Oxide Thin FilmsThreshold Voltage Stability
shifts increased from -0.5 to -6.9 V with the increasing temperature. Time-dependent PBTS instabilities could be explained by a stretched-exponential equation, representing a charge-trapping mechanism.
26