Normally-OFF dual-gate Ga2O3 planar MOSFET and FinFET with high ION and BV

Abstract

Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> is a promising Wide-Band-Gap material for power electronics due to its large bandgap and inexpensive native substrate. However, due to technological difficulties, only normally-ON n-type junctionless MOSFET (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> <; 0 V) can be made easily. We propose using dual-gate configuration to achieve normally-OFF device for both Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> planar MOSFET and FinFET. Through TCAD simulations with calibrated parameters, it is found that normally-OFF dual-gate planar device and FinFET can be achieved with 6X and 1X enhancement in ON-current (I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> ), respectively, as higher doping is allowed, while breakdown voltage is not sacrificed.