GaN meets organic: technologies and devices based on gallium-nitride/organic hybrid structures

Abstract

Abstract This article discusses the state-of-the-art of GaN-based inorganic/organic structures and devices, and shows where hybrid approaches have allowed for new fields of applications for the III-nitride material system. After a brief introduction to GaN, different strategies for the preparation of hybrid GaN-organic structures are reviewed. Recent results from the fields of hybrid electronics and hybrid optoelectronics with the GaN material system as the inorganic component are discussed in the following sections. Finally, a brief summary of results in the field of hybrid sensing devices based on the GaN platform is given.