Microbeam Heavy-Ion Single-Event Effect on Xilinx 28-nm System on Chip

Abstract

Heavy-ion microbeam experiment was performed on Xilinx 28-nm system on chip (SoC) at Beijing Heavy Ion-13 tandem accelerator in the China Institute of Atomic Energy. Five functional blocks of Xilinx Zynq-7020 SoC processing system were irradiated and tested. The distributions of single-event effect (SEE) sensitivity regions and cross sections of on-chip memory (OCM), D-Cache, arithmetic and logic unit (ALU), floating-point unit (FPU), and peripheral were first obtained. The results suggest that the most sensitive block among the five blocks is D-Cache and the least is FPU, and the SEE sensitivities of OCM, ALU, and peripheral are at the same level.