Concepedia

Accurate modeling of gate tunneling currents in Metal-Insulator-Semiconductor capacitors based on ultra-thin atomic-layer deposited Al2O3 and post-metallization annealing

Joel Molina‐Reyes, Héctor Uribe-Vargas, Reydezel Torres‐Torres, Pierre Giovanni Mani-González, Alberto Herrera‐Gómez

Thin Solid Films · 2017 · 25 citations · 40 references

References

40

Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells

G. Dingemans, W. M. M. Kessels · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2012 · 787 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Current Transport and Maximum Dielectric Strength of Silicon Nitride Films

Simon M. Sze · Journal of Applied Physics · 1967 · 476 citations

Engineering, Materials Engineering, Materials Science +17

The 2016 oxide electronic materials and oxide interfaces roadmap

Michael Lorenz, M. S. Ramachandra Rao, Elvira Fortunato et al. · Journal of Physics D Applied Physics · 2016 · 318 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

On the physics of metal-semiconductor interfaces

Winfried Mönch · Reports on Progress in Physics · 1990 · 288 citations

Engineering, Electrical Engineering, Physics +17

Distinction between the Poole-Frenkel and tunneling models of electric-field-stimulated carrier emission from deep levels in semiconductors

Sergey Ganichev, E. Ziemann, W. Prettl et al. · Physical review. B, Condensed matter · 2000 · 238 citations

Natural Sciences, Materials Science, Physics +17