Site-controlled crystalline InN growth from the V-pits of a GaN substrate

A growth diagram for plasma-assisted molecular beam epitaxy of In-face InN

Chad S. Gallinat, Gregor Koblmüller, Jay S. Brown et al. · Journal of Applied Physics · 2007 · 144 citations

Natural Sciences, Materials Engineering, Materials Science +17

Growth Temperature Dependence of Indium Nitride Crystalline Quality Grown by RF-MBE

Yoshiki Saito, Hisatomo Harima, Eiji Kurimoto et al. · physica status solidi (b) · 2002 · 110 citations

Natural Sciences, Materials Science, Physics +17

Potential performance of indium-nitride-based devices

Stephen K. O’Leary, B. E. Foutz, M. S. Shur et al. · Applied Physics Letters · 2006 · 96 citations

Engineering, Materials Science, Physics +15

High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy

Xinqiang Wang, Shitao Liu, Nan Ma et al. · Applied Physics Express · 2012 · 92 citations

Natural Sciences, Materials Science, Physics +16

Indium Droplet Elimination by Radical Beam Irradiation for Reproducible and High-Quality Growth of InN by RF Molecular Beam Epitaxy

Tomohiro Yamaguchi, Yasushi Nanishi · Applied Physics Express · 2009 · 79 citations

Natural Sciences, Materials Engineering, Materials Science +11