A Novel TCAD-Based Thermal Extraction Approach for Nanoscale FinFETs

Abstract

Self-heating and thermal modeling in fin-shaped FETs (FinFETs) are studied in this brief using calibrated 3-D TCAD simulations. Using the second order R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> network extraction, we demonstrate for the first time a simple method for the modeling of thermal resistances and capacitances for BSIMCMG compact models using small-signal ac capacitance method. We show that the extraction of thermal time constants using the second-order R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> method is superior to the other techniques used in the literature. Using this technique, we extract the thermal time constants for FinFETs to be in the order of a few nano/pico seconds.