Epitaxial growth of cubic GaN and AlN on Si(001)

Heteroepitaxial wurtzite and zinc-blende structure GaN grown by reactive-ion molecular-beam epitaxy: Growth kinetics, microstructure, and properties

R. C. Powell, N.-E. Lee, Y.-W. Kim et al. · Journal of Applied Physics · 1993 · 418 citations

Engineering, Materials Engineering, Materials Science +17

Growth of cubic phase gallium nitride by modified molecular-beam epitaxy

Michael J. Paisley, Zlatko Sitar, J. B. Posthill et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1989 · 362 citations

Engineering, Materials Engineering, Materials Science +17

Epitaxial growth and characterization of zinc-blende gallium nitride on (001) silicon

Ting Lei, T. D. Moustakas, R. J. Graham et al. · Journal of Applied Physics · 1992 · 354 citations

Engineering, Materials Engineering, Materials Science +17

An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy

S. Strite, J. Ruan, Z. Li et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1991 · 328 citations

Engineering, Materials Science, Physics +17

Growth of GaN by ECR-assisted MBE

T. D. Moustakas, Ting Lei, R. J. Molnar · Physica B Condensed Matter · 1993 · 236 citations · Full text

Engineering, Materials Engineering, Materials Science +17