Nanotechnology · 2017 · 43 citations · 28 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsLight-emitting DiodesOptical Properties Of SemiconductorsQuantum WellsSemiconductor DefectsSemiconductor Device MaterialsSemiconductor PhysicsExtended DefectsMolecular Beam EpitaxyOptical PropertiesPhotoluminescencePhotoluminescence In Quantum WellsQuantum Well Light-emitting DiodesSemiconductor CharacterizationSurface Segregation
current excitation. These results not only demonstrate that TST technique provides optical device quality GaAsBi/GaAs MQWs but highlight the relevance of TST-based growth techniques on the fabrication of future heterostructure devices based on dilute bismides.
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Molecular beam epitaxy growth of GaAs1−xBix
S. Tixier, M. Adamcyk, T. Tiedje et al. · Applied Physics Letters · 2003 · 453 citations
Natural Sciences, Materials Engineering, Materials Science +17